The 2nd International Workshop
“Materials for Advanced Interconnects and Packaging”
The 2nd international workshop “Materials for Advanced Interconnects and Packaging” aims to provide a platform to enhancethe multilateral communication, exchange and collaboration among there searchers working on fundamentals and applications of interconnect and packaging materials. Special attention is paid for the training and education of Master and PhD students. For this reason the first day of the workshop is completely covered by tutorial lectures given by invited speakers actively working in the field of interconnects and packaging.
The focus of this Workshop is to discuss challenges of interconnect materials including low- and ultralow-k materials,metallization, packaging, reliability and emerging technologies. The further shrinking of the semiconductor devices requires the introduction of dielectric materials with high porosity and much thinner metallization liners, and addressing the increasing resistivity of Cu with decreasing dimensions.Innovation in development of new materials, processes, and architectures are needed to address these problems and to maintain the reliability of interconnects. This Workshop is a forum for researchers to exchange the latest advances in materials, processes, integration, and reliability in advanced interconnects and packaging, and to discuss interconnects for emerging technologies.
Ultralow-k Dielectric Materials
Ultra Low-k materials: synthesis and characterization
Porogens,porosity characterization, and pore sealing
ULK mechanical properties and alternate curing of ULK
Intrinsic electrical properties
Metallization for Advanced Interconnects
Advances in CVD, PVD, ALD, electrochemical and electroless deposition
Advances in liner, Cu seed, and fill technologies
Advanced BEOL integration and key issues in the integration of porous ULK
RIE,plasma processing, planarization, and cleaning technologies
Novel integration concepts
Electromigration,TDDB, and stress voiding
Dielectric integrity and thermal/mechanical stability
Advances in Packaging Technologies
Wire bonding and flip chip
3D Integration and through-via technology
Intermetallic connections (IMC) and Lead-free solder
Nano-interconnects,such as nanotubes and nanowires
Molecular self-assembling technologies
North China University of Technology (NCUT,Beijing),
Institute of Microelectronics of China Academy of Sciences (IME CAS, Beijing),
China Agrochemical University (CAU,Beijing),
Tianjin University (TU, Tianjin),
Fudan University (FU, Shanghai).
l Workshop Location and dates:
North China University of Technology,Beijing, China
October 15-17, 2017
l Program Committee:
Mikhail Baklanov (North China University of Technology, China) -Chair
Jiang Yan (North China University of Technology, China) -Co-Chair
Chao Zhao (Institute of Microelectronics CAS, China) - Co-Chair
Jing Zhang (North China University of Technology, China) - Co-Chair
Eiichi Kondoh (Yamanashi University, Japan)
Konstantin Vorotilov (Moscow StateTechnical University MIREA, Russia)
Ashok Mahajan (North Maharashtra University, India)
Xin-ping Qu (Fudan University, China)
Xia Xiao (Tianjin University, China)
Zhiwei He (China Agrochemical University, China)
Xun Gu (China Electronics Technology Group Corporation (CETC), China)
l Local Organizing Committee:
Jiang Yan (North China University of Technology, China) -Chair
Jing Zhang (North China University of Technology, China) -Co-Chair
Fengbin Liu (North China University of Technology, China) -Co-Chair
Mikhail Baklanov (North China University of Technology)
Zhiwei He (China Agrochemical University,Beijing)
Shuhua Wei (North China University of Technology) - Secretary
Tel: 010-88803118,13240292299 E-mail: firstname.lastname@example.org
l Tutorial Lectures:
1. Dr.Wenqi Zhang, China National Center for Advanced Packaging (NCAP), China.
Title: 3D high density packaging and system integration
2. Prof.Mayumi Takeyama, Kitami Institute of Technology, Japan.
Title: The choice of the diffusion barrier material in Al and Cu metallization.
3. Prof.Jim Leu, National Chiao-Tung University, Taiwan.
Title: PECVD Low-k silicon carbonitride films using silazane precursors
4. Dr.Larry Zhao, LAM Research, USA.
Title: Integration challenges.
5. Dr. Sergey Zyryanov, Lomonosov Moscow State University, Russia.
Title: Challenges of plasma processing of organosilicate based low-k materials.
6. Prof. Ashok Mahajan, North Maharashtra University, India.
Title: Spin on low-k thin films for inter layer dielectric (ILD)applications.
7. Prof. Lucile Broussous, ST Microelectronics,France.
Title: Post-etch Cleaning processes and chemistries in the Interconnections Levels.
8. Dr. Alfred Grill,IBM, USA.
Title: PECVD SiCOH and pSiCOH Inter-Metal Dielectrics.
9. Prof. Dorel Toma,ex-director of Tokyo Electron America
Title: Past, present and future of low-k dielectrics
l Tentative Schedule:
Great Wall tour
Invited and regular talks
Regular talks and poster session
l Important Dates: (Scheduled)
Abstract submission deadline: Sept 1st, 2017
Program online: Oct 1st, 2017
Final announcement: Oct 1st, 2017
Manuscript submission: on site (publication is planned in one of ISI journals )