2018-03-01,Microsystems & Nanoengineering Summit 2018(MINE2018) 时间:2018年7月8至11日(7月8日注册报到) 地点:中国科学院学术会堂(地址:北京市海淀区中关村北一条15号)
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Fouad Karouta seminar学术报告
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Fouad Karouta seminar学术报告

报告人:Dr. Fouad Karouta

Australian National Fabrication Facility, ACT Node Manager

Research School of Physics and Engineering

Australian National University

时间:2018 3 19 日上午 10

地点:北京大学理科二号楼 2736 会议室

Part 1: Compositional and Optical properties of PECVD SiNx Layers.

Abstract: First a short introduction of the Australian National Fabrication Facility and of the ACT Node will be given highlighting its various technological capabilities. Then our study of Plasma Enhanced Chemical Vapour Deposition (PECVD) technique of SiNx will be exposed correlating the structural, compositional and optical properties of PECVD SiNx layers to deposition parameters showing the variations of refractive index, N/Si ratio, H% incorporation. Also results of ammonia-free nitride layers will be shown and discussed. Finally stress-free nitride layers will be discussed along silicon oxi-nitride (SiON) layers.

Reference: http://iopscience.iop.org/article/10.1088/0022-3727/45/44/445301

Part 2: A Practical Approach to Reactive Ion Etching

Abstract: General aspects of reactive ion etching (RIE) technique such as anisotropy, lag effect, RIE chemistries and micro-masking will be described and discussed. A simple and practical thermodynamic approach is exposed explaining the criteria as to how to select the best chemistry for etching a specific material and to explain the GaN etching results obtained by the author. Alsoselectivity between mask and materials will be discussed and three level masking is described to obtain high aspect ratio structures in InP and related materials and their applications in photonics demonstrating tuneable laser1, a PhC polarisation filter2 and tuneable PhC cavities3

Reference: http://iopscience.iop.org/0022-3727/47/23/233501/




简历 Biography: After a chemistry degree Fouad Karouta accomplished a PhD in Physics from Montpellier University (France) on epitaxy of InGaAsSb structures for laser applications. In 1986 he joined Eindhoven University of Technology in The Netherlands working on GaAs-based lasers/VCSELs/ HEMTs, GaN-based HEMTs and InP-based photonic integrated circuits. Early 2009 he joined the Australian National University, Canberra, Australia, as the manager of an open access micro- and nano-fabrication facility spanning a large suite of equipment related to semiconductor technology

联系人:信息科学技术学院 陈清 教授,电话 62757555

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ieee-nanomed--Call for paper(CINS,2007-05-07,11890)


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